(China (Mainland))
Product Summary
The FF200R12KE3 is an IGBT-Module.
Parametrics
FF200R12KE3 absolute maximum ratings: (1)collector emitter voltage: 1200V; (2)DC collector current: 200A; (3)repetitive peak collector current: 400A; (4)total power dissipation: 1050W; (5)gate emitter peak voltage: ±20V.
Features
FF200R12KE3 features: (1)forward voltage: 1.65V; (2)peak reverse recovery current: 150A; (3)recovered charge: 20μC; (4)reverse recovery energy: 9 mJ; (5)thermal resistance, junction to case: 0.20K/W.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
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 FF200R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 200A DUAL |
Data Sheet |
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FF200R12KE3_B2 |
Infineon Technologies |
IGBT Modules N-CH 1.2KV 295A |
Data Sheet |
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